- Chipsets
- Adata
Products by Adata
Date (default)
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- True latency: 11.5 ns
- Memory speed (Tested Speed): 5200
- Memory speed (SPD): 5200 MHz
- DDR memory version: 5
- TRAS timing: 38
- TRCD timing: 38
- TRP timing: 38
- Voltage: 1.25V
- View Details →
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- Sequential read speed: 7400 MB/s
- Terabytes Written (TBW): 780
- Random read speed: 730000 IOPS
- Sequential write speed: 6000 MB/s
- Random write speed: 610000 IOPS
- Internal storage: 1000GB
- Controller channels: 8
- PCI Express (PCIe) version: 4
- View Details →
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- Sequential read speed: 7400 MB/s
- Terabytes Written (TBW): 740
- Random read speed: 650000 IOPS
- Sequential write speed: 6400 MB/s
- Random write speed: 740000 IOPS
- Internal storage: 1000GB
- Controller channels: 8
- PCI Express (PCIe) version: 4
- View Details →
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- Sequential read speed: 7400 MB/s
- Terabytes Written (TBW): 1480
- Random read speed: 650000 IOPS
- Sequential write speed: 6400 MB/s
- Random write speed: 740000 IOPS
- Internal storage: 2000GB
- Controller channels: 8
- PCI Express (PCIe) version: 4
- View Details →
-
- True latency: 10ns
- Memory speed (Tested Speed): 3200
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 19
- TRCD timing: 19
- TRP timing: 19
- Voltage: 1.35V
- View Details →
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- True latency: 10ns
- Memory speed (Tested Speed): 3200
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 19
- TRCD timing: 19
- TRP timing: 19
- Voltage: 1.35V
- View Details →
-
- True latency: 10ns
- Memory speed (Tested Speed): 3200
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 19
- TRCD timing: 19
- TRP timing: 19
- Voltage: 1.35V
- View Details →
-
- True latency: 10ns
- Memory speed (Tested Speed): 3200
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 19
- TRCD timing: 19
- TRP timing: 19
- Voltage: 1.2V
- View Details →
-
- True latency: 10ns
- Memory speed (Tested Speed): 3200
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 19
- TRCD timing: 19
- TRP timing: 19
- Voltage: 1.35V
- View Details →
-
- True latency: 10ns
- Memory speed (Tested Speed): 3200
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 19
- TRCD timing: 19
- TRP timing: 19
- Voltage: 1.35V
- View Details →
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- Sequential read speed: 7400MB/s
- Terabytes Written (TBW): 1560
- Random read speed: 750000IOPS
- Sequential write speed: 6800MB/s
- Random write speed: 630000IOPS
- Internal storage: 2000GB
- Controller channels: 8
- PCI Express (PCIe) version: 4
- View Details →
-
- True latency: 10ns
- Memory speed (Tested Speed): 3200
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 20
- TRCD timing: 16
- TRP timing: 20
- Voltage: 1.35V
- View Details →
-
- Sequential read speed: 7400MB/s
- Terabytes Written (TBW): 3120
- Random read speed: 700000IOPS
- Sequential write speed: 6800MB/s
- Random write speed: 550000IOPS
- Internal storage: 4000GB
- Controller channels: 8
- PCI Express (PCIe) version: 4
- View Details →
-
- Sequential read speed: 7400MB/s
- Terabytes Written (TBW): 780
- Random read speed: 730000IOPS
- Sequential write speed: 6000MB/s
- Random write speed: 610000IOPS
- Internal storage: 1000GB
- Controller channels: 8
- PCI Express (PCIe) version: 4
- View Details →
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- True latency: 12.86ns
- Memory speed (Tested Speed): 5600
- Memory speed (SPD): 4480MHz
- DDR memory version: 5
- TRAS timing: 36
- TRCD timing: 36
- TRP timing: 36
- Voltage: 1.25V
- View Details →
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- True latency: 9.4ns
- Memory speed (Tested Speed): 7200
- Memory speed (SPD): 7200MHz
- DDR memory version: 5
- TRAS timing: 46
- TRCD timing: 46
- TRP timing: 46
- Voltage: 1.4V
- View Details →
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- Sequential read speed: 7400MB/s
- Terabytes Written (TBW): 1560
- Random read speed: 750000IOPS
- Sequential write speed: 6800MB/s
- Random write speed: 630000IOPS
- Internal storage: 2000GB
- Controller channels: 8
- PCI Express (PCIe) version: 4
- View Details →
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- True latency: 9.4ns
- Memory speed (Tested Speed): 3600
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 21
- TRCD timing: 21
- TRP timing: 21
- Voltage: 1.35V
- View Details →
-
- True latency: 10ns
- Memory speed (Tested Speed): 3200
- Memory speed (SPD): 2666MHz
- DDR memory version: 4
- TRAS timing: 19
- TRCD timing: 19
- TRP timing: 19
- Voltage: 1.35V
- View Details →
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- Sequential read speed: 9500MB/s
- Terabytes Written (TBW): 700
- Random read speed: -
- Sequential write speed: 8500MB/s
- Random write speed: -
- Internal storage: 1000GB
- Controller channels: 8
- PCI Express (PCIe) version: 5
- View Details →